to-220 / plastic-encapsulate mosfet s IRF830 mosfet( n-channel ) features . dynamic dv/dt rating . repetitive avalanche rated . fast switching . ease of paralleling . simple drive requirement maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value units i d @t c =25 continuous drain current, v gs @ 10 v 4.5 a i d @t c =100 continuous drain current, v gs @ 10 v 2.9 a i dm pulsed drain current (note 1) 18 a p d power dissipation 2 w v gs gate-souse voltage 20 v e as single pulse avalanche energy (note2) 280 mj i ar avalanche current (note 1) 4.5 a e ar repetitive avalanche energy (note 1) 7.4 mj dv/dt peak diode recovery dv/dt (note 3) 3.5 v/ns t j junction temperature 150 t stg storage temperature -55 ~+ 15 0 1 r ja thermal resistance from junction to ambient 62 .5 /w to-220-3l 1. gate 2. drain 3. source 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jan,2014
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit drain- s ource b reakdown v oltage v (br)dss v gs =0v,i d =250 a 500 gate- t hreshold v oltage v (gs) th v ds =v gs , i d =250 a 2 4 v gate-body l eakage l gss v ds =0v, v gs = 20 v 100 na v ds =500v, v gs =0v 25 zero g ate v oltage d rain c urrent i dss a drain- s ource o n- r esistance r ds( o n) v gs =10v, i d =2.7a (note 4) 1.5 forward t ran s conductance g fs v ds =50v, i d =2.7a (note 4 ) 2.5 s diode f orward v oltage v sd i s =4.5a, v gs =0v 1.6 v total g ate c harge q g gate- s ource c harge q gs gate- d rain c harge q gd v ds =400v, v gs =10v,i d =3.1a 22 nc input c apacitance c iss output c apacitance c oss 160 reverse t ransfer c apacitance c r ss v ds =25v, v gs =0v,f=1mhz pf . 610 6 8 38 5.0 ? turn-on delay time t d (on) 8.2 ns rise time t r 16 turn-off delay time t d(off) 42 ns v dd =250v,r d =79 ? , i d =3.1a,r g =12 ? 16 ns ns fall time t r notes: 1. repetitive rating : pulse width li mited by maximum junction temperature . 2. l = 24mh, i as = 4.5a, v dd = 50v, r g = 25 , starting t j = 25c . 3. i sd = 4.5a, di/dt = 300a/s, v dd = v (br)dss , starting t j = 25c . 4. pulse test : pulse width 300s, duty cycle 2% . ? (note 4) (note 4) (note 4,5) (note 4,5) (note 4,5) (note 4,5) (note 5) (note 5) (note 5) 5 these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jan,2014
01234567 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.4 0.8 1.2 1.6 0.01 0.1 1 345678910 0 1 2 3 4 5 6 7 8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 v ds =10v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 4.5 pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 pulsed i d =2.7a r ds(on) ?? v gs on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v v gs =5.5v pulsed IRF830 output characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 6v 10v v gs =5v v gs =4.5v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jan,2014
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